Publications

Dissemination

 

12/2024: Engineered Substrates with ultra-low resistivity Polycrystalline SiC Base – A game changer in SiC power device performance and reliability

  • Author(s): G. Picun (1), Dr. L. Zumbo (2), Dr. E. Guiot (1), G. Bellocchi (2), A. Guarnera (2), S. Rascunà (2), A. Imbruglia (2), G. Arena (2), M. Saggio (2)
  • Partner: Soitec (1), ST-IT (2)
  • Published: Bodo's Wide Bandgap Event 2024

 

11/2024: TRANSFORM: Trusted European SiC Value Chain for a greener Economy

  • Author(s): M. Koyuncu
  • Partner: BOSCH
  • Published: Semicon Europa 2024

 

10/2024: Temperature Dependence of 1200V-10A SiC Power Diodes: Impact of Design and Substrate on Electrical Performance

  • Author(s): A. Abbas, C. Le Royer, R. Lavieville, J. Biscarrat, G. Gelineau, J. Widiez, S. Gningue, S. Rouchier, F. Allibert, W. Schwarzenbach, E. Bano, P. Godignon
  • Partner: CEA
  • Published: International Conference on Silicon Carbide and Related Materials (ICSCRM 2024)

 

09/2024: Wide Bandgap Material Transfer as a Flagship Technology for Future High Power Devices

  • Author(s): J. Widiez, G. Gelineau, C. Masante, J. Chrétien, A. Moulin, V. Prudkovskiy, N. Troutot, E. Rolland, P. Gergaud, D. Mariolle, S. Barbet, L. Corbin, V. Amalbert, P. Gilles, F. Milesi, F. Mazen, L. Le Van-Jodin
  • Partner: CEA
  • Published: 2023 MRS Fall Meeting and Exhibit

 

09/2024: Dynamic characterization and robustness of SiC MOSFETs based on SmartSiCTM engineered substrates

  • Author(s): M. Alaluss, C. Böhm, P. Heimler, T. Basler A. Elsayed, K. Oberdieck, S. Goel
  • Partner: TUC
  • Published: International Conference on Silicon Carbide and Related Materials (ICSCRM 2024)

 

09/2024: SmartSiC Review

  • Author(s): E. Guio
  • Partner: Soitec
  • Published: International Conference on Silicon Carbide and Related Materials (ICSCRM 2024)

 

09/2024: SmartSiC™ engineered substrate – A game changer in SiC power device performance and reliability

  • Author(s): G. Picun (1), Dr. L. Zumbo (2), Dr. E. Guiot (1), G. Bellocchi (2), A. Guarnera (2), S. Rascunà (2), A. Imbruglia (2), G. Arena (2), M. Saggio (2)
  • Partner: Soitec (1), ST-IT (2)
  • Published: International Conference on Silicon Carbide and Related Materials (ICSCRM 2024)

 

08/2024: Application of advanced characterization techniques to SmartSiC product for substrate-level device performance optimization

  • Author(s): A. Drouin (1), R. Simon (2), W. Schwarzenbach (1), M. Zielenski (1), D. Radisson (1), E. Guiot (1), E. Cela (1), A. Chapelle (1), H. Biard (1)
  • Partner: Soitec (1), TherMap (2)
  • Published: International Conference on Silicon Carbide and Related Materials (ICSCRM 2024)

 

08/2024: Poly-SiC characterization and properties for SmartSiC

  • Author(s): H. Biard (1), A. Drouin (1), W. Schwarzenbach (1), K. Alassaad (1), L. Coeurdray (1), V. Chagneux (1), M. Coche (1), S. Monnoye (1), H. Mank (1), S. Rouchier (1), T. Barge (1), D. Radisson (1), A. Moulin (2), S. Barbet (2), J. Widiez (2), S. Odoul (1), C. Maleville (1)
  • Partner: Soitec (1), CEA-Leti (2)
  • Published: International Conference on Silicon Carbide and Related Materials (ICSCRM 2024)

 

08/2024: Study on epi performance of engineered 150 mm and 200 mm SiC substrates in a multi-wafer batch reactor

  • Author(s): P. Hens (1), K.M. Albrecht (1), B. Kallinger (2), R. Karhu (2), J. Erlekampf (1)
  • Partner: AIX (1), IISB (2)
  • Published: International Conference on Silicon Carbide and Related Materials (ICSCRM 2024)

 

08/2024: Crystal originated defects monitoring and reduction in production grade SmartSiC engineered substrates

  • Author(s): E. Cela, K. Alassaad, A. Chapelle, S. Rouchier, W. Schwarzenbach, A. Drouin, V. Chagneux, M. Zielinski
  • Partner: Soitec
  • Published: International Conference on Silicon Carbide and Related Materials (ICSCRM 2024)

 

08/2024: Increasing relative manufacturing yield of in SiC MOSFET using advanced semiconductor substrate engineering

  • Author(s): N. Piluso, C. Calabretta, E. Fontana, G. Maira, A. Russo, A. Severino, G. Arena, E. Guiot, A. Drouin, W. Schwarzenbach
  • Partner: Soitec
  • Published: International Conference on Silicon Carbide and Related Materials (ICSCRM 2024)

 

08/2024: C-Face Epitaxy for Enhanced SiC Device Performance: Insights from Schottky Barrier Diodes

  • Author(s): V.Q.G. Roth, A.Y. Hannan, L. K. Bera, U. Chand, Y.-C. Chien, N. X. Sang, W.D. Song, S. Kumar, N. Singh S. Chung, Y. Kam, M. Zielinski, L. Kabelaa2, W. Schwarzenbach, I. Radu, L. Boudin
  • Partner: Soitec
  • Published: International Conference on Silicon Carbide and Related Materials (ICSCRM 2024)

 

08/2024: SmartSiC™ 150 & 200mm engineered substrate: enabling SiC power devices with improved performances and reliability

  • Author(s): E.Guiot
  • Partner: Soitec
  • Published: International Conference on Silicon Carbide and Related Materials (ICSCRM 2024)

 

08/2024: Improvement over temperature of the substrate resistance contribution on a SiC diode by using SiC engineered substrates

  • Author(s): G. Bellocchi, S. Rascuna`, P. Mancuso, G. Arena, M. Saggio G. Picun, E. Guiot, W. Schwarzenbach
  • Partner: Soitec
  • Published: International Conference on Silicon Carbide and Related Materials (ICSCRM 2024)

 

08/2024: Study on epi performance of engineered 150 mm and 200 mm SiC substrates in a multi-wafer batch reactor

  • Author(s): P. Hens, K. M. Albrecht, B. Kallinger, R. Karhu, J. Erlekampf
  • Partner: Soitec
  • Published: International Conference on Silicon Carbide and Related Materials (ICSCRM 2024)

 

08/2024: DUV laser-based defect inspection of single-crystal 4H-SiC and SmartSiC engineered substrates for high volume manufacturing

  • Author(s): E. Cela, W. Schwarzenbach, R. Shrestha, G. Bast , S. Shahidi , G. Simpson
  • Partner: Soitec
  • Published: International Conference on Silicon Carbide and Related Materials (ICSCRM 2024)

 

08/2024: Nearly Defect-Free Epitaxy on 150 mm C-Face SiC Substrates

  • Author(s): V.Q.G. Roth, A.Y. Hannan, L. K. Bera, U. Chand, Y.-C. Chien, N. X. Sang, W.D. Song, S. Kumar, N. Singh S. Chung, Y. Kam, M. Zielinski, L. Kabelaa2, W. Schwarzenbach, I. Radu, L. Boudin
  • Partner: Soitec
  • Published: International Conference on Silicon Carbide and Related Materials (ICSCRM 2024)

 

08/2024: Gate Oxide Performance and Reliability on SmartSiC™ Wafers and the Influence of RTA processing on Gate Oxide Lifetime

  • Author(s): T. Becker, M. Rommel, H. Schlichting, E. Guiot and F. Allibert
  • Partner: Soitec
  • Published: International Conference on Silicon Carbide and Related Materials (ICSCRM 2024)

 

08/2024: Dynamic characterization and robustness of SiC MOSFETs based on SmartSiCTM engineered substrates

  • Author(s): M. Alaluss, C. Böhm, P. Heimler, T. Basler,A. Elsayed, K. Oberdieck, and S. Goel
  • Partner: Soitec
  • Published: International Conference on Silicon Carbide and Related Materials (ICSCRM 2024)

 

08/2024: Investigation of BPD Faulting in Engineered vs Monocrystalline SiC Substrates Under Ultra-High Carrier Injection for Pulsed Power Application

  • Author(s): N. A. Mahadik, D. A. Scheiman, R. E. Stahlbush, A. Drouin, S. Rouchier, W.Schwarzenbach, M. Zielinski
  • Partner: Soitec
  • Published: International Conference on Silicon Carbide and Related Materials (ICSCRM 2024)

 

08/2024: Temperature Dependence of 1200V-10A SiC Power Diodes: Impact of Design and Substrate on Electrical Performance

  • Author(s): A. Abbas, C. Le Roye), R. Lavieville, J. Biscarrat, G. Gelineau, J. Widiez,S. Gningue, S. Rouchier, F. Allibert,W. Schwarzenbach, E. Bano, P. Godignon
  • Partner: Soitec
  • Published: International Conference on Silicon Carbide and Related Materials (ICSCRM 2024)

 

08/2024: High Temperature Evolution of Thin Films Confined Between Two Silicon Carbide Substrates

  • Author(s): M. Le Cunff, F. Rieutord, D. Landru, O. Kononchuk, N. Cherkashin
  • Partner: Soitec
  • Published: International Conference on Silicon Carbide and Related Materials (ICSCRM 2024)

 

07/2024: SmartSiC™ engineered substrate – A game changer in SiC power device performance and reliability

 

06/2024: Reliability and Failure Mechanisms of Direct Bonded Power Semiconductor Devices in Power Cycling Test

  • Author(s): M. Köhler (1); M. Curkin (1); J. Müller (2); C. Thomas (1); K.-G. Besendörfer (2); N. Heuck (1)
  • Partner: HSHL (1), Semikron (2)
  • Published: 36th International Symposium on Power Semiconductor Devices and ICs (ISPSD)

 

06/2024: Digital twin-based lifetime estimation of SiC power modules

  • Author(s): A. Mathew(1,2), J. Albrecht(2), S. Rzepka(2), P. Heimler(1), D. Xie(1), M. Alaluss(1), T. Basler(1)
  • Partner: TUC (1), IISB (2)
  • Published: 36th International Symposium on Power Semiconductor Devices and ICs (ISPSD)

 

06/2024: ML-basiertes Auslegungstool für Leistungselektronikkühler auf Basis von CFD-Simulationsdaten

  • Author(s): A. Sehlinger, D. Plein, H. Plooij, S. Spring
  • Partner: TPlus
  • Published: NAFEMS Magazin

 

06/2024: Influence of Transfer Molding on the Reliability of DCM SiC Power Modules

  • Author(s): J. Rudzki (1), H. Ströbel-Maier (1), M. Becker (1), P. Heimler (2), D. Xie (2), M. Alaluss (2), T. Basler (2), A. Mathew (2)(3), S. Rzepka (3)
  • Partner: (1) Semikron Danfoss; (2) TUC; (3) IISB
  • Published: PCIM Europe 2024

 

06/2024: Adaptive Resonant Controller for a Three-Phase PFC Converter for an On-Board Charge Application

  • Author(s): R. Troudi, K. Ribeiro de Faria, M. Coulibaly
  • Partner: VALEO
  • Published: PCIM Europe 2024

 

06/2024: Efficiency, Volume and CO2 Emissions Comparison in a PFC Converter with an Active Filter Solution for OBC Application

  • Author(s): K. Ribeiro de Faria, J.-R. Capounda, V. Rajagopal, P. Menegazzi, B. Paul, N. Kamil, S. Galeshi, N. Messi
  • Partner: VALEO
  • Published: PCIM Europe 2024

 

06/2024: Comparison of Two Bidirectional 11KW 400V CLLC and CLLLC Resonant Converters for EV Applications

  • Author(s): H. Mousavi Somarin, N. Messi, F. Sarrafin Ardebili, L. Braz
  • Partner: VALEO
  • Published: PCIM Europe 2024

 

06/2024: SmartSiC™ 150 & 200mm engineered substrate: increasing SiC power device current density up to 30%

  • Author(s): E. Guiot (1), F. Allibert (1), J. Leib (2), T. Becker (2), O. Rusch (2), A. Drouin (1), W. Schwarzenbach (1)
  • Partner: Soitec (1), IISB (2)
  • Published: PCIM Europe 2024, CSManTech 2024, APEC

 

04/2024: Cost-effective SiC Substrate Manufacturing for Power Devices Enabled by Oxide-free Wafer Bonding

  • Author(s): Dr. B. Dielacher (presenter), P. Kerepesi
  • Partner: EV GROUP E. THALLNER GMBH
  • Published: Presentation at the PE International 2024 conference in Brussels (April 17-18)

 

12/2023: Investigation of Two-Stage Ag-Sintering Processes for the Die Attach of Power Devices

  • Author(s): D. Sumkötter, M. Wollschläger, M. Köhler, M. Lawniczak, J. Weickmann, K.-G. Besendörfer, N. Heuck
  • Partner: HSHL, SEMI
  • Published: 25th IEEE Electronics Packaging Technology Conference (EPTC 2023)
  • DOI: 10.1109/EPTC59621.2023.10457720

 

11/2023: Radiation Hardness of SiCTrenchMOSFETDevices

  • Author(s): S. Schwaiger, J. Alsmeier, H. Syed, A. Martinez-Limia, K. Heyers
  • Partner: Bosch
  • Published: Semicon Europa 2023

 

11/2023: SmartSiC : a greener, faster and better technology for SiC

  • Author(s): C. Maleville
  • Partner: Soitec
  • Published: International Conference on Silicon Carbide and Related Materials (ICSCRM 2023)

 

11/2023: Radiation Hardness of SiC based Inverters based on an EV Mis-sion Profile

  • Author(s): H. Syed, S. Schwaiger, S. Goel, A. Martinez-Limia, K. Heyers
  • Partner: Bosch
  • Published: PCIM Europe 2024

 

11/2023: Comparative study of methods for counting of dislocation in 4H-SiC

  • Author(s): C. Kranert, P. Wimmer, A. Drouin, C. Reimann, J. Friedrich
  • Partner: IISB
  • Published: ELSEVIER
  • DOI: 10.1016/j.mssp.2023.107948

 

10/2023: Automotive Charger Grid-Forming Control Opportunities for G2V and V2X Applications

  • Author(s): E. Fayad, D. Sal y Rosas, A. Bruyere, F. Poirier
  • Partner: L2EP
  • Published: IEEE VPPC
  • DOI: 10.1109/VPPC60535.2023.10403262

 

10/2023: Online Threshold Voltage Monitoring at SiC Power Devices during Power Cycling Test and Possible Consequences

  • Author(s): P. Heimler, M. Alaluss, C. Schwabe, X. Liu, J. Lutz, T. Basler
  • Partner: TUC
  • Published: European Conference on Power Electronics and Applications (EPE 2023)

 

09/2023: Dynamic Flux Balance Control of a Phase-shifted Full Bridge

  • Author(s): J. Martiš, P. Vorel, R. Tománek
  • Partner: Brno University of Technology (BUT)
  • Published: International Conference on Electrical Drives and Power Electronics (EDPE 2023)

 

09/2023: Centrotherm High Temperature Annealing and Oxidation Furnaces

  • Author(s): P. Schmid
  • Partner: CENTRO
  • Published: International Conference on Silicon Carbide and Related Materials (ICSCRM 2023)

 

09/2023: Threshold Voltage Hysteresis Investigation of SiC MOSFETs with Different Structures under Various Measurement Conditions

  • Author(s): D. Xie, P. Heimler, R. Boldyrjew-Mast, M. Alaluss, S. Thiele, J. Lutz, T. Basler
  • Partner: TUC
  • Published: European Symposium on Reliability of Electron Devices, Failure Physics and Analysis (ESREF 2023)

 

09/2023: Confirmation of the growth mechanism of the buffer layer in epitaxial graphene on SiC

  • Author(s): V.S Prudkovskiy (1) , R. Templier (1) , A. Moulin (1) , N. Troutot (1) , G. Gelineau (1) , S. Huet (1) , V H. Le (1) , K. Mony (2) , G. Lapertot (2) , M. Delcroix (1), S. Caridroit (1) , S. Barbet (1) , J. Widiez (1)
  • Partner: CEA-Leti univ Grenoble-Alpes (1); 2: Univ Grenoble-Alpes CEA-IRIG (2)
  • Published: ICSCRM

 

09/2023: SmartSiC substrate : increasing SiC MOSFETs current density from device to module level

  • Author(s): E. Guiot (1), F. Allibert (1), J. Leib (2), T. Becker (2), W. Schwarzenbach (1); T. Erlbacher (2)
  • Partner: Soitec (1), Fraunhofer IISB (2)
  • Published: ICSCRM, APEC

 

09/2023: Empowering electric vehicles with superior SiC SmartSiC substrates hold the key to ramping volumes of better SiC devices for automotive and industrial applications

  • Author(s): E. SABONNADIÈRE, C. MALEVILLE, AND C. MENON
  • Partner: Soitec
  • Published: Compound Semiconductor Magazine

 

09/2023: Processing and electrical characterization of SiC-on-Insulator structures

  • Author(s): Guillaume GELINEAU 1, Cédric MASANTE 1, Emmanuel Rolland 1, Sophie BARBET 1, Lucie CORBIN 1, Anne-Marie PAPON 1, Simon CARIDROIT 1, Mathieu DELCROIX 1, Stéphanie HUET 1, Alexandre MOULIN 1, Vladimir PRUDKOVSKIY 1, Nicolas TROUTOT 1, Séverin ROUCHIER 2, Loïc TURCHETTI 2, Karine MONY 3 and Julie WIDIEZ 1
  • Partner: 1: CEA-Leti Univ Grenoble-Alpes; 2: SOITEC; 3: Univ-Grenoble-Alpes CEA-IRIG)
  • Published: ICSCRM

 

07/2023: The ECSEL - TRANSFORM project: the role of the Italian cluster in the European SiC Value Chain

  • Author(s): D. Barater, G. Franceschini, A. Imbruglia, G. P. Schiapparelli, A. Tallarico
  • Partner: HPE
  • Published: AEIT AUTOMOTIVE 2023

 

06/2023: Single-stage three-phase AC/DC PFC resonant converter with galvanic isolation using an integrated transformer

  • Author(s): Jan Martiš, Pavel Vorel
  • Partner: Brno University of Technology (BUT)
  • Informative lecture at Brno University of Technology

 

06/2023: Role of interface/border traps on the threshold voltage instability of SiC power transistors

  • Author(s): V. Volosov, S. Cascino, M. Saggio, A. Imbruglia, F. Di Giovanni, C. Fiegna, E. Sangiorgi, A.N. Tallarico
  • Partner: IUNET
  • Published: ELSEVIER
  • DOI: 10.1016/j.sse.2023.108699

 

06/2023: Effect of Chip Metallization and Process Parameters on the Die Attach Properties of Direct Bonded Power Devices

  • Author(s): M. Curkin, M. Köhler, S. Kraft, J. Müller, K.-G. Besendörfer, N. Heuck
  • Partner: SEMI, HSHL
  • Published: 2023 IEEE 73th Electronic Components and Technology Conference (ECTC23)
  • DOI: 10.1109/ECTC51909.2023.00286

 

05/2023: Design and Technology of Automotive Power Modules — An Introduction

  • Author(s): Stefan Oeling
  • Partner: SEMI
  • Published: ISPSD

 

05/2023: Bosch Semiconductors, large size 1200V MOSFETs prepared on SmartSiC were presented on the booth during PCIM 2024

  • Author(s): E. Guiot, Metin Koyuncu
  • Partner: SOITEC
  • Published: PCIM Europe 2023

 

05/2023: Design of a Four-Limb Coupled Inductor for a Three-phase Six-Switched Boost PFC Converter for EV Application

  • Author(s): K. Ribeiro de Faria, L. Bendani, N. Bouzidi
  • Partner: VALEO
  • Published: PCIM Europe 2024

 

05/2023: Comparison of High Frequency Three Phase Transformer Technologies for High Power Density On Board Chargers

  • Author(s): W. da Cunha Alves, N. Messi
  • Partner: VALEO
  • Published: PCIM Europe 2023

 

05/2023: Benchmarking experiment of substrate quality including SmartSiC wafers by epitaxy in a batch reactor

  • Author(s): B. Kallinger, P. Hens, C. Kranert, K. M. Albrecht, J. Erlekampf
  • Partner: IISB
  • Published: DGKK

 

05/2023: Electrical characterization of 200 mm 4H-SiC-on-polycristalline SiC wafers bonding interface

  • Author(s): C. Masante 1, J. M. Bethoux 2, G. Gelineau 1, E. Rolland 1, S. Barbet 1, A. Moulin 1, L. Turchetti 2, O. Ledoux, W. Schwarzenbach 2, S. Rouchier 2, M. Delcroix 1, N. Troutot 1, S. Huet 1, V. Prudkovskiy 1, K. Mony 3, J. Biscarrat 1, J. Widiez 1
  • Partner: 1: CEA-Leti Unviv Grenoble Alpes; 2: SOITEC; 3: Univ Grenoble-Alpes CEA-IRIG
  • Published: ICSCRM

 

05/2023: Analysis of SysML-based Product Development Collaborations in Cross-Company Value Creation Network

  • Author(s): MOLLAHASSANI, D., BOSSE. R., GÖBEL, J.C.
  • Partner: TUK
  • Published: ProSTEP iViP

 

05/2023: Knowledge Collaboration Approach in Smart Product Innovation Networks

  • Author(s): MOLLAHASSANI, D., EICKHOFF, T., JURESA, Y. and GÖBEL, J.C.
  • Partner: TUK
  • Published: CIRP Design
  • DOI: 10.1016/j.procir.2023.02.158

 

05/2023: Ansatz zur Kollaboration in Wertschöpfungsnetzwerk-zentrierten Innovationsprozessen Smarter Produkte

  • Author(s): MOLLAHASSANI, D., JURESA, Y., EICKHOFF, T., GÖBEL, J.C.
  • Partner: TUK
  • Published: SSPE2023
  • DOI: 10.18419/opus-13131

 

05/2023: Improved power cycling reliability through the use of SmartSiC™ engineered substrate for power devices

  • Author(s): E. Guiot, F. Allibert, J. Leib, T. Becker, T. Erlbacher
  • Partner: SOITEC
  • Published: PCIM Europe 2023

 

11/2022: Wissensbasis zur Förderung von Innovationen Smarter PSS innerhalb eines Wertschöpfungsnetzwerkes

  • Author(s): D. Mollahassani, T. Eickhoff, A. Eiden, J.C. Göbel
  • Partner: TU Kaiserslautern
  • Published: Tag des Systems Engineering 2022

 

09/2022:Tailored Polycrystalline Substrate for SmartSiCTM Substrates Enabling High Performance Power Devices

  • Author(s): H. Biard, S. Odoul, W. Schwarzenbach, I. Radu, C. Maleville, A. Potier, M. Ferrato, E. Guajioty
  • Partner: Soitec SA, Mersen
  • Published: 19th International Conference on Silicon Carbide and Related Materials 2022 (ICSCRM22)
  • https://doi.org/10.4028/p-65127n

 

09/2022: Proven Power Cycling Reliability of Ohmic Annealing Free SiC Power Device through the Use of SmartSiCTM Substrate

  • Author(s): E. Guiot, F. Allibert, J. Leib, T. Becker, W. Schwarzenbach, T. Erlbacher, S. Rouchier
  • Partner: Soitec SA, Fraunhofer IISB
  • Published: 19th International Conference on Silicon Carbide and Related Materials 2022 (ICSCRM22)
  • DOI: 10.4028/p-777hqg

 

09/2022: High Sensitivity Surface Defect Inspection of SiC and SmartSiCTM Substrates Using a DUV Laser-Based System

  • Author(s): E. Cela, S. Shahidi , P. Parangi , R. Shrestha, G. Simpson, J. Widiez, N. Daval, A. Chapelle, S. Rouchier, W. Schwarzenbach
  • Partner: Soitec SA, CEA-LETI
  • Published: 19th International Conference on Silicon Carbide and Related Materials 2022 (ICSCRM22)
  • https://doi.org/10.4028/p-4918s1

 

09/2022: Benchmarking Experiment of Substrate Quality including SmartSiCTM Wafers by Epitaxy in a Batch Reactor

  • Author(s): B. Kallinger, P. Hens, P. Berwian, C. Kranert, K.M. Albrecht, J. Erlekampf
  • Partner: Fraunhofer IISB, AIXTRON SE
  • Published: 19th International Conference on Silicon Carbide and Related Materials 2022 (ICSCRM22)
  • DOI: 10.4028/p-av6tdz

 

09/2022: Engineered SiC materials for power technologies

  • Author(s): W. Schwarzenbach, S. Rouchier, G. Berre, R. Boulet, O. Ledoux, E. Cela, A. Drouin, A. Chapelle, S. Monnoye, H. Biard, K. Alassaad, L. Viravaux, N. Ben Mohamed, D. Radisson, G. Picun, G. Lavaitte, A. Bouville-Lallart, J. Roi, J. Widiez, K. Abadie, E. Rolland, F. Fournel, G. Gélineau, F. Mazen, A. Moulin, C. Moulin, D. Delprat, N. Daval, S. Odoul, P. Sandri and C. Maleville
  • Partner: Soitec, CEA
  • Published: International Conference on IC Design and Technology 2022 (ICICDT22)
  • https://ieeexplore.ieee.org/document/9933092

 

09/2022: Evaluation of crystal quality and dopant activation of Smart Cut™-transferred 4H-SiC thin film

  • Author(s): G. Gelineau, J. Widiez, E.Rolland, K.Vladimirova, A. Moulin, V. Prudkovskiy, N.Troutot, P. Gergaud, D. Mariolle,
    S. Barbet, V. Amalbert, G. Lapertot, K. Mony, S. Rouchier, R. Boulet, G. Berre, W. Schwarzenbach, Y. Bogumilowicz
  • Partner: CEA, Soitec
  • Published: scientific poster at 19th International Conference on Silicon Carbide and Related Materials (ICSCRM2022)
  • TRANSFORM_Poster ICSCRM2022_CEA_Soitec.pdf

 

09/2022: Impact of aluminum casing on high-frequency transformer leakage inductance and AC resistance

  • Author(s): Reda Bakri, Wendell Da Cunha Alves, Xavier Cimetiere, Frédéric Gillon, Antoine Bruyere, Lucian Vatamanu
  • Partner: Université de Lille, L2EP, Valeo Siemens eAutomotive France
  • Published: 24th European Conference on Power Electronics and Applications (EPE'22 ECCE Europe)
  • https://ieeexplore.ieee.org/document/9907445

 

08/2022: Advanced Local Grid Control System for Offshore Wind Turbines with the Diode-Based Rectifier HVDC Link Implemented in a True Scalable Test Bench

  • Author(s): D. Herrera, T. Tricarico, D. Oliveira, M. Aredes, E. Galván-Díez, J. M. Carrasco
  • Partner:: USE
  • Published: Energies, 11 August 2022
  • https://doi.org/10.3390/en15165826

 

05/2022 New Die Attach Materials: Silver and Silver/ Copper sintering pastes

 

04/2022: The Mobility Scenario vs Green Deal Objectives

  • Author(s): Antonio Imbruglia, Francesco Gennaro, Pietro Di Grazia
  • Partner: STMicroelectronics, Italy
  • Published: Smart System Integration 2022 (26-28.04.2022 in Grenoble)
  • TRANSFORM_Paper SSI2022_ST-IT.pdf

 

03/2022 SmartSiC TM for Manufacturing of SiC Power devices

 

03/2022: Supporting Collaborative Innovation Processes in Smart Product Value Creation Networks

 

03/2022: Optimization-Based Capacitor Balancing Method with Customizable Switching Reduction for CHB Converters

  • Author(s): Luis Galván, Pablo Jesús Gómez, Eduardo Galván, Juan Manuel Carrasco
  • Partner: University of Seville (USE)
  • Published: Energies 2022, 15(6), 1976
  • https://www.mdpi.com/1996-1073/15/6/1976

 

12/2021: Optimization-Based Capacitor Balancing Method with Selective DC Current Ripple Reduction for CHB Converters

  • Author(s): Luis Galván, Pablo Jesús Gómez, Eduardo Galván, Juan Manuel Carrasco
  • Partner: University of Seville (USE)
  • Published: Energies 2022 15(1), 243
  • https://www.mdpi.com/1996-1073/15/1/243

 

10/2021: 150mm SiC engineered substrates for high-voltage power devices